Infrared and Laser Engineering, Volume. 51, Issue 2, 20210907(2022)
Evolution mechanism of transient optical properties of ultrafast laser-induced monocrystalline silicon
Figures & Tables(6)
Fig. 1. Variation of electron temperature with time (a) and lattice temperature with time (b) under subpicosecond laser irradiation with energy density of 0.25, 0.28, 0.30, 0.35, 0.40 J/cm2 and pulse width of 430 fs; Variation of electron temperature with time (c) and lattice temperature with time (d) under picosecond laser irradiation with energy density of 0.20, 0.30, 0.38, 0.41, 0.42 J/cm2 of 8 ps
Fig. 2. Variation of electron temperature with time under laser irradiation with pulse width of 430, 700, 1000, 1200, 1500 fs and energy density of 0.35 J/cm2
Fig. 3. Variation of real and imaginary parts of dielectric constant with time under the action of pulse width of 8 ps and pulse energy density of 0.28 J/cm2
Fig. 4. Under laser irradiation with pulse width of 430 fs and 8 ps respectively, (a) change of peak carrier number density and the real part of peak dielectric constant on monocrystalline silicon surface with the change of incident laser energy density; (b) Change of peak refractive index and peak extinction coefficient on monocrystalline silicon surface with the change of incident laser energy density
Fig. 5. Changes of refractive index and extinction coefficient of silicon surface with pulse width when energy density is 0.28 J /cm2 and 0.31 J /cm2, respectively
Table 1. Model parameters of monocrystalline silicon
View tableView in ArticleTable 1. Model parameters of monocrystalline silicon
Quantity Symbol Value Electron-hole pair heat conductivity[ 16 ]KC/W·(m·K)−1 7.1×10−3TC−0.5552 Lattice heat conductivity[ 16 ]KL/W·(m·K)−1 1.585×105TL−1.23 Carrier heat conductivity[ 16 ]CC/J·(m3·K)−1 3NkB Lattice heat capacity[ 16 ]CL/J·(m3·K)−1 1.978×106+354TL−3.68×106/TL2 Auger recombination coefficient[ 16 ]γ/m6·s−1 3.8×10−43 Ambipolar diffusion coefficient D/m2·s−1 (300×1.8×10−3)/TL Impact ionization coefficient[ 16 ]θ/s−1 3.6×1010exp(−1.5Eg/(kBTC)) Effective electron mass[ 14 ]m*/kg 9.1×10−31(0.15+3.1×10−5TC) Energy relaxation time[ 16 ]τe/s 0.5×10−12{1+[N/(2×1027)]2} Interband absorption (532 nm)[ 17 ]α/m−1 5.02×105exp(TL/430) Two-photon absorption (532 nm)[ 18 ]β/s·m·J−1 0 Free-carrier absorption cross section (532 nm)[ 19 ]Θ/m2 0 Interband absorption (800 nm)[ 16 ]α/m−1 1.12×105exp(TL/430) Two-photon absorption (800 nm)[ 16 ]β/s·m·J−1 9×10−11 Free-carrier absorption cross section (800 nm)[ 16 ]Θ/m2 2.9×10−22(TL/300) Latent heat of melting[ 16 ]Lm /J·m−2 4206×106 Latent heat of evaporation[ 16 ]Lv /J·m−2 32020×106 Electron heat capacity[ 16 ]Ce/J·(m3·K)−1 100Te Lattice heat capacity[ 16 ]Cl/J·(m3·K)−1 1.06×106×(3.005−2.629×10−4Tl) Electron heat conductivity[ 16 ]Ke/W·(m·K)−1 67
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Xiaojie Liao, Suying Lin, Bing Han. Evolution mechanism of transient optical properties of ultrafast laser-induced monocrystalline silicon[J]. Infrared and Laser Engineering, 2022, 51(2): 20210907
Paper Information
Category: Special issue-Laser technology and its application
Received: Nov. 25, 2021
Accepted: --
Published Online: Mar. 21, 2022
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