Journal of Inorganic Materials, Volume. 35, Issue 6, 682(2020)

Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS2/WSe2 van der Waals Heterostructures

Shilin TAN... Shunda YIN and Gang OUYANG* |Show fewer author(s)
Author Affiliations
  • Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, China
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    Figures & Tables(4)
    Schematic diagrams of two kinds of van der Waals heterostructures
    Thickness-dependent bandgaps of MoS2, WSe2 and h-BN
    Thickness-dependent AR lifetime of negative trion (${{\tau }_{{{\text{A}}^{-}}}}$) and biexciton (${{\tau }_{{{\text{A}}^{xx}}}}$) of different system
    Thickness-dependent interlayer recombination (R) and biexciton AR rate ($\tau _{{{\text{A}}^{xx}}}^{-1}$) of heterostructures
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    Shilin TAN, Shunda YIN, Gang OUYANG. Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS2/WSe2 van der Waals Heterostructures[J]. Journal of Inorganic Materials, 2020, 35(6): 682

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    Paper Information

    Category: RESEARCH PAPER

    Received: Jul. 22, 2019

    Accepted: --

    Published Online: Mar. 2, 2021

    The Author Email: OUYANG Gang (gangouy@hunnu.edu.cn)

    DOI:10.15541/jim20190386

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