Fig. 1. Simulation flow frame diagram

Fig. 2. (a) Simulated band diagram of the 15 MLs InAs/8 MLs GaSb long-wave superlattices; (b) Simulated band diagram of the 8 MLs InAs/6 MLs GaSb mid-wave superlattices; (c) Mid/long wave dual-band infrared detector structure

Fig. 3. (a) Simulated band diagram of the Al_xGa_1−xSb with different Al components; (b) Simulated band diagram of the device

Fig. 4. (a) J-V curve under different thickness of barrier at 77 K；(b) Photoresponse simulations with different thickness of barrier at ±0.3 V

Fig. 5. (a) Dark current density simulations of absorber with different doping; (b) Photoresponse simulations of absorber with different doping; (c) Dark current simulations of absorber with different doping; (d) Photoresponse simulations of absorber with different doping; (e) Simulated band diagram of absorber with different doping concentrations

Fig. 6. (a) Photoresponse simulations with different thickness of mid-wave absorber; (b) Photoresponse simulations with different thickness of long-wave absorber; (c) Cross talk simulations with different thickness of mid-wave absorber; (d) Cross talk simulations with different thickness of long-wave absorber

Fig. 7. (a) J-V curve under different temperatures; (b) Dark current dominant mechanism at different temperatures

Fig. 8. (a) Photoresponse simulations under different voltages; (b) Quantum efficiency simulations under different voltages

Fig. 9. (a) Detectivity simulations of MWIR at different temperatures; (b) Detectivity simulations of LWIR at different temperatures