High Power Laser and Particle Beams, Volume. 31, Issue 8, 84102(2019)
Compact model of millimeter wave noise in nano-MOSFET
[1] [1] Chalkiadaki M A, Enz C C. RF small-signal and noise modeling including parameter extraction of nanoscale MOSFET from weak to strong inversion[J]. IEEE Trans Microwave Theory & Techniques, 2015, 63(7): 1-12.
[2] [2] Chalkiadaki M A, Enz C C. Accurate RF modeling of nanoscale MOSFET using BSIM6 including low levels of inversion[J]. Microelectronics Journal, 2014, 45(9): 1159-1167.
[3] [3] Lin D W, Cheng M L, Wang S W, et al. A novel method of MOSFET series resistance extraction featuring constant mobility criteria and mobility universality[J]. IEEE Trans Electron Devices, 2010, 57(4): 890-897.
[4] [4] Chan L H K, Yeo K S, Chew K W J, et al. High-frequency noise modeling of MOSFETs for ultra low-voltage RF applications[J]. IEEE Trans Microwave Theory & Techniques, 2014, 63(1): 141-154.
[5] [5] Ong S N, Yeo K S, Chew K W J, et al. A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS[J]. Solid-State Electronics, 2012, 68(3): 32-37.
[7] [7] Chan L H K, Yeo K S, Chew K W J, et al. MOSFET drain current noise modeling with effective gate overdrive and junction noise[J]. IEEE Electron Device Letters, 2012, 33(8): 1117-1119.
[8] [8] Langevelde R V, Paasschens J C J, Scholten A J, et al. New compact model for induced gate current noise[C]//IEEE International Electron Devices Meeting. 2003.
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Liu Renhao, Wang Jun. Compact model of millimeter wave noise in nano-MOSFET[J]. High Power Laser and Particle Beams, 2019, 31(8): 84102
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Received: Mar. 5, 2019
Accepted: --
Published Online: Jul. 25, 2019
The Author Email: Renhao Liu (524097060@qq.com)