High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes

A. Pandey; W. J. Shin; J. Gim; R. Hovden; Z. Mi

doi:10.1364/PRJ.383652

Photonics Research, Volume. 8, Issue 3, 331(2020)

High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes EIC Choice Award

A. Pandey¹, W. J. Shin¹, J. Gim², R. Hovden², and Z. Mi^1、*

Author Affiliations

¹Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

²Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

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A. Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi. High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes[J]. Photonics Research, 2020, 8(3): 331

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Paper Information

Category: Optoelectronics

Received: Nov. 18, 2019

Accepted: Jan. 7, 2020

Published Online: Feb. 19, 2020

The Author Email: Z. Mi (ztmi@umich.edu)

DOI:10.1364/PRJ.383652

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology