[1] [1] SCHWEDE J W, BARGATIN I, RILEY D C, et al. Photonenhanced thermionic emission for solar concentrator systems [J]. Nature Materials, 2010, 9(1): 762-767.

[2] [2] JULIAN GOLDSMID H. Thermionic energy conversion [J]Springer Series in Materials Science, 2009, 121(1):221-233.

[3] [3] HATSOPOULOS G N, GYFTOPOULOS E P. Thermionic energy conversion [M]. Cambridge, Massachusetts, MIT Press, 1979.

[4] [4] SEGEV G, ROSENWAKS Y, KRIBUS A, Efficiency of photon enhanced thermionic emission solar converters [J]. Solar Energy Materials & Solar Cells, 2012, 107(1):125–130.

[5] [5] VARPULA1 A, PRUNNILA M. Diffusionemission theory of photon enhanced thermionic emission solar energy harvesters [J]. Journal of Applied Physics, 2012, 112(044506): 1-5.

[6] [6] RADZIEMSKA E. Thermal performance of Si and GaAs based solar cells and modules: a review [J]. Progress in Energy and Combustion Science, 2003, 29(1): 407-424.

[7] [7] YUAN Jiren, HONG Wenqin, DENG Xinhua. Influence of nickel impurity the performance of GaAs solar cells with impurity photovoltaic effect [J]. Acta Photonica Sinica, 2012, 41(10): 1167-1170.

[8] [8] MARTIN A, KEITH E, YOSHIHIRO H, et al. Solar cell efficiency tables (version 39) [J]. Progress in Photovoltaics:Research and Applications, 2012, 20(1): 12-20.

[9] [9] ORTIZ E, REYSTOLLE I, DIAZ V, et al. A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns [J]. Electron Devices, IEEE Transactions on, 2001, 48(5): 840-844.

[10] [10] NIU Jun, ZHANG Yijun, CHANG Benkang, et al. Influence of exponential doping structure on the performance of GaAs photocathodes [J]. Applied Optics, 2009, 48(29): 5445-5450.

[11] [11] DU Yujie, DU Xiaoqing, CHANG Benkang, et al. Spectral response performance of transmissonmode GaAs photocathode in activation [J]. Acta Photonica Sinica, 2005, 34(12): 1792-1794.

[12] [12] LI Baoxia, WANG Tao, LI Xiaoting. Heavy carbon doping of GaAs by metalorganic chemical vapor deposition [J]. Acta Photonica Sinica, 2003, 32(2): 249-252.

[13] [13] ZOU Jiju, GAO Pin, YANG Zhi, et al. Influence of activelayer thickness on reflectionmode GaAs photocathode [J]. Acta Photonica Sinica, 2008, 37(6): 1112-1115.

[14] [14] GAO Fei, GUO Hui, HU Canglu, et al. Electrostatic bonding of GaAs photocathode materials to glass [J]. Acta Photonica Sinica, 2008, 37(8): 1549-1552.

[15] [15] CHENG Liang, QIAN Yunsheng, CHANG Benkang. Reflection on surface photovoltage spectroscopy for transmissionmode GaAs photocathodes of different active layer thickness [J]. Acta Photonica Sinica, 2011, 40(7): 1008-1012.

[16] [16] ZHU Y M, UNUMA T, SHIBATA K, et al. Power dissipation spectra and terahertz intervalley transfer gain in bulk GaAs under high electric fields [J]. Applied Physics Letters, 2008, 93(1): 232102.

[17] [17] ZHU Y M, UNUMA T, SHIBATA K, et al. Femtosecond acceleration of electrons under very high electric fields in bulk GaAs investigated by timedomain terahertz spectroscopy [J]. Applied Physics Letters, 2008, 93(1): 042116.

[18] [18] PENG Y, WEN Y, ZHANG D S, et al. The optimal relation between laser power and pulse number for the fabrication of surfacemicrostructured silicon [J]. Applied Optics, 2011, 50(1): 4765.

[19] [19] PENG Y, ZHANG D S, CHEN H Y, et al. Differences in the evolution of surfacemicrostructured silicon fabricated by femtosecond laser pulses with different wavelength [J]. Applied Optics, 2012, 51(1): 635.

[20] [20] PENG Yan, CHEN Hongyan, ZHU Chenggang, et al. The effect of laser wavelength on the formation of surfacemicrostructured silicon [J]. Materials Letters, 2012, 83(1): 127.