[1] Bo B X, Wang L, Qu Y et al. 808 nm wavelength high power semiconductor laser arrays[J]. Chinese Journal of Lasers, 28, 494-496(2001).

[2] Zhou M C, Jiang X F, Zhang L F et al. Optical performance of high power laser diode stack[J]. Chinese Journal of Lasers, 40, 1202004(2013).

[3] Hu Z, Shao L F, Li C et al. Study on the technique for measuring the peak power of narrow pulsed semiconductor laser arrays[J]. Laser & Infrared, 49, 670-674(2019).

[4] Espinoza A, Petasecca M, Fuduli I et al. The evaluation of a 2D diode array in “magic phantom” for use in high dose rate brachytherapy pretreatment quality assurance[J]. Medical Physics, 42, 663-673(2015).

[5] Cai L. Design of optical treatment head with semiconductor laser for medical hair removal[D](2019).

[6] OFweek. Huaguang optoelectronics launches 1600 W macro channel stacked array laser[EB/OL]. https://laser.ofweek.com/2019-06/ART-240002-8220-30394489.html

[7] Liu C, Yu J, Fan Z W. Light collecting characteristics of Nd∶‍YAG ceramic condenser chamber unilaterally pumped by laser stacked array[J]. Chinese Journal of Lasers, 44, 0301001(2017).

[8] Sun S J, Tan H, Meng H C et al. Coupler free grating external cavity spectral beam combining of diode laser stacks[J]. Chinese Journal of Lasers, 45, 1001007(2018).

[9] Liu F H, Gong X, Zhang Y N et al. Research progress on 808 nm VCSEL-array-pumped solid-state lasers[J]. Laser & Optoelectronics Progress, 56, 120001(2019).

[10] Zhang W Q, Liu Y, Chen N J et al. Laser diode double-pass double-end pumped Yb∶YAG slab laser[J]. Chinese Journal of Lasers, 46, 1101007(2019).

[11] Wang H, Zhang R K, Lu D et al. 1.55 μm high-power high-speed directly modulated semiconductor laser array[J]. Acta Optica Sinica, 39, 0914001(2019).

[12] Feng A, Le X Y, Zhang X F. Research progress on laser device used in laser target designator[J]. Laser & Optoelectronics Progress, 56, 010002(2019).

[13] Liao L F, Ma Y F, Chen W et al. A device and method for measuring power and stability of a single bar in a laser diode stack array[P].

[14] Boucke K, Jandeleit J, Brandenburg W et al. Packaging and characterization equipment for high-power diode laser bars and VCSELs[J]. Proceedings of SPIE, 4285, 165-172(2001).

[15] Roehner M, Muentz H, Schroeder O et al. Characterization device for diode-laser-stack beam propagation[J]. Proceedings of SPIE, 4932, 608-614(2003).

[16] Guo L H, Lü W Q, Gao S X et al. Measurement of the collimated beam pointing among bars for diode laser vertical stack[J]. Opto-Electronic Engineering, 38, 11-14(2011).

[17] Roehner M, Boucke K, Poprawe R. Characterization device for measuring beam parameter product and beam quality of collimated and uncollimated diode lasers[J]. Proceedings of SPIE, 6101, 61011B(2006).

[18] Chen X, Tang S X, Hui H C et al. High power laser multi-parameter measurement technique based on integrating sphere[J]. Chinese Journal of Lasers, 43, 0804002(2016).

[19] Han K, Xi X M, Wang X L et al. High-power fiber laser parameter integrated synchronous test device[P].

[20] Mikhailovich R A, Vladimirovich U M. A device for measuring the radiated power of a laser over an extended spectral range[P].

[21] Liu X S, Zhao W, Xiong L L et al. Testing and characterization of high power semiconductor lasers[M]. Packaging of high power semiconductor lasers. Micro- and opto-electronic materials, structures, and systems, 227-286(2014).

[22] Ling X H, Cui B F, Zhang S et al. Failure analysis of 980 nm large-optical-cavity single light bar high-power LD[J]. Laser & Infrared, 45, 369-372(2015).