Absorption and emission modulation in a MoS<sub>2</sub>–GaN (0001) heterostructure by interface phonon–exciton coupling

Yuba Poudel; Jagoda Sławińska; Priya Gopal; Sairaman Seetharaman; Zachariah Hennighausen; Swastik Kar; Francis D’souza; Marco Buongiorno Nardelli; Arup Neogi

doi:10.1364/PRJ.7.001511

Photonics Research, Volume. 7, Issue 12, 1511(2019)

Absorption and emission modulation in a MoS₂–GaN (0001) heterostructure by interface phonon–exciton coupling

Yuba Poudel¹, Jagoda Sławińska¹, Priya Gopal¹, Sairaman Seetharaman², Zachariah Hennighausen³, Swastik Kar³, Francis D’souza², Marco Buongiorno Nardelli¹, and Arup Neogi^1、*

Author Affiliations

¹Department of Physics, University of North Texas, Denton, Texas 76203, USA

²Department of Chemistry, University of North Texas, Denton, Texas 76203, USA

³Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA

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Yuba Poudel, Jagoda Sławińska, Priya Gopal, Sairaman Seetharaman, Zachariah Hennighausen, Swastik Kar, Francis D’souza, Marco Buongiorno Nardelli, Arup Neogi. Absorption and emission modulation in a MoS₂–GaN (0001) heterostructure by interface phonon–exciton coupling[J]. Photonics Research, 2019, 7(12): 1511

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Paper Information

Category: Optical and Photonic Materials

Received: Sep. 26, 2019

Accepted: Oct. 30, 2019

Published Online: Nov. 28, 2019

The Author Email: Arup Neogi (arup@unt.edu)

DOI:10.1364/PRJ.7.001511

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology