Chinese Physics B, Volume. 29, Issue 8, (2020)
High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
Figures & Tables(6)
Fig. 1. SEM images of (a) Si fin profile, (b) Si fin exposure, (c) Si fin recess, and (d) SiGe’s selective epitaxial growth.
Fig. 2. HAADF-STEM images for SiGe fin fabrication in narrow trench by using replacement fin strategy, and its high resolution images (a) at top of SiGe fin, (b) in the middle of SiGe fin, and (c) at interface between SiGe and Si substrate.
Fig. 3. (a) TEM and (b) HRSTEM images of SiGe fin along fin direction post SiGe SEG.
Fig. 4. SMF images of SiGe SEG from bottom to top along fin direction, for (a) Si substrate, (b) SiGe between STI oxides.
Fig. 6. HAADF-STEM images for (a) SiGe’s selective epitaxial growth in the narrow trench, and (b) its high resolution image at bottom of SiGe fin.
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Ying Zan, Yong-Liang Li, Xiao-Hong Cheng, Zhi-Qian Zhao, Hao-Yan Liu, Zhen-Hua Hu, An-Yan Du, Wen-Wu Wang. High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing[J]. Chinese Physics B, 2020, 29(8):
Paper Information
Received: Apr. 29, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Li Yong-Liang (liyongliang@ime.ac.cn)
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