Quantitative Analysis of Cu(In,Ga)Se<sub>2</sub> Thin Films Deposited by Magnetron Sputtering Technology Using Laser-Induced Breakdown Spectroscopy

Lili Dong; Shiming Liu; Junshan Xiu

doi:10.3788/LOP57.233003

Laser & Optoelectronics Progress, Volume. 57, Issue 23, 233003(2020)

Quantitative Analysis of Cu(In,Ga)Se₂ Thin Films Deposited by Magnetron Sputtering Technology Using Laser-Induced Breakdown Spectroscopy

Lili Dong¹, Shiming Liu², and Junshan Xiu^2、*

Author Affiliations

¹School of Chemistry and Chemical Engineering of Shandong University of Technology, Zibo, Shandong 255049, China

²School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, Shandong 255049, China

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Figures & Tables(8)

Fig. 1. LIBS experimental setup for analyzing CIGS thin film

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Fig. 2. LIBS spectrum of CIGS thin film

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Fig. 3. Calibration curves of different sample sets. (a) Calibration curves of x_Ga/x_(In+Ga); (b) calibration curves of x_Cu/x_(In+Ga)

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Fig. 4. Merged calibration curves. (a) Merged calibration curve of x_Ga/x_(In+Ga); (b) merged calibration curve of x_Cu/x_(In+Ga)

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Fig. 5. EDS and LIBS results of CIGS thin film samples S1, S2 and S3 deposited at different sputtering parameters

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Table 1. EDS measured x_Ga/x_(In+Ga) and x_Cu/x_(In+Ga) in CIGS thin films obtained at different sputtering parameters

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Table 1. EDS measured x_Ga/x_(In+Ga) and x_Cu/x_(In+Ga) in CIGS thin films obtained at different sputtering parameters

Sputtering parameter			Atomic concentration ratio		Sample set
Power/W	Pressure/Pa	Time/min	x_Ga/x_(In+Ga)	x_Cu/x_(In+Ga)	Sample set
90	1.0	10	0.298	0.811	F1
		20	0.284	0.842
		30	0.275	0.820
		40	0.244	0.851
		50	0.266	0.882
90	0.5	60	0.273	0.855	F2
	1.0		0.320	0.935
	2.0		0.346	0.990
	2.5		0.290	1.000
70	2.0	55	0.271	0.976	F3
80			0.288	0.923
90			0.333	0.944
95			0.321	0.910

Table 2. Parameters of calibration curves

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Table 2. Parameters of calibration curves

Atomic concentration ratio	Fitting equation	Parameter	Single calibration			Merged calibration
Atomic concentration ratio	Fitting equation	Parameter	F1	F2	F3	Merged calibration
x_Ga/x_(In+Ga)	y=a+sx	a	0.239	0.276	0.271	0.264
		s	0.940	0.810	0.818	0.846
		R²	0.996	0.998	0.992	0.991
x_Cu/x_(In+Ga)	y=a+sx+cx²	a	0.460	0.438	0.441	0.561
		s	0.031	0.056	0.052	-0.206
		c	-	-	-	0.139
		R²	0.950	0.992	0.995	0.995

Table 3. Sputtering parameters of three CIGS thin film samples and relative errors between LIBS and EDS results
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Table 3. Sputtering parameters of three CIGS thin film samples and relative errors between LIBS and EDS results
Sample Sputtering parameter Relative error/%
Power /W Pressure /Pa Time /min x_Ga/x_(In+Ga) x_Cu/x_(In+Ga)
S1 85 1.5 35 2.26 1.36
S2 100 1.0 45 4.05 1.31
S3 65 1.5 25 1.49 0.46

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Lili Dong, Shiming Liu, Junshan Xiu. Quantitative Analysis of Cu(In,Ga)Se₂ Thin Films Deposited by Magnetron Sputtering Technology Using Laser-Induced Breakdown Spectroscopy[J]. Laser & Optoelectronics Progress, 2020, 57(23): 233003

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Paper Information

Category: Spectroscopy

Received: Apr. 6, 2020

Accepted: May. 8, 2020

Published Online: Dec. 10, 2020

The Author Email: Xiu Junshan (xiujunshan@126.com)

DOI:10.3788/LOP57.233003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. EDS measured xGa/x(In+Ga) and xCu/x(In+Ga) in CIGS thin films obtained at different sputtering parameters

Table 1. EDS measured xGa/x(In+Ga) and xCu/x(In+Ga) in CIGS thin films obtained at different sputtering parameters

Table 2. Parameters of calibration curves

Table 2. Parameters of calibration curves

Table 3. Sputtering parameters of three CIGS thin film samples and relative errors between LIBS and EDS results

Table 3. Sputtering parameters of three CIGS thin film samples and relative errors between LIBS and EDS results

Table 1. EDS measured x_Ga/x_(In+Ga) and x_Cu/x_(In+Ga) in CIGS thin films obtained at different sputtering parameters

Table 1. EDS measured x_Ga/x_(In+Ga) and x_Cu/x_(In+Ga) in CIGS thin films obtained at different sputtering parameters