Journal of Terahertz Science and Electronic Information Technology , Volume. 20, Issue 9, 884(2022)
Radiation effects of SiC JBS diodes and SiC MOSFETs
[2] [2] ADELL P. Dose and dose rate effects in microelectronics: pushing the limits to extreme conditions[C]// IEEE NSREC Short Course. Paris,France:IEEE Conference Publishing Services, 2014:65-67.
[3] [3] DIXIT S K,DHAR S,ROZEN J,et al. Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors[J]. IEEE Transactions on Nuclear Science, 2006,53(6):3687-3692. doi:https://doi.org/10.1109/TNS.2006.885164.
[4] [4] AKTURK A, MCGARRITY J M, POTBHARE S, et al. Radiation effects in commercial 1 200 V 24 A silicon carbide power MOSFETs[J]. IEEE Transactions on Nuclear Science, 2013,59(6):3258-3264. doi:https://doi.org/10.1109/TNS.2012.2223763.
[5] [5] ZHANG C X,SHEN X,ZHANG E X,et al. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2013,60(7):2361-2367. doi:10.1109/TED.2013.2263426.
[6] [6] YOKOSEKI T,ABE H,MAKINO T,et al. Recovery of the electrical characteristics of SiC MOSFETs irradiated with gamma-rays by thermal treatments[J]. Materials Science Forum,Switzerland:Trans Tech Publications, 2015(821-823):705-708. doi:https:// doi.org/10.4028/www.scientific.net/MSF.821-823.705.
[7] [7] HAZDRA P, POPELKA S. Radiation resistance of wide-bandgap semiconductor power transistors[J]. Physica Status Solidi, 2017,214(4):1600447-1-8. doi:https://doi.org/10.1002/pssa.201600447.
[8] [8] MURATA K,MITOMO S,MATSUDA T,et al. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs[J]. Physica Status Solidi, 2017,214(4):1600446-1-7. doi:https://doi.org/10.1002/pssa.201600446.
[9] [9] WASKIEWICZ R J, ANDERS M A, LENAHAN P M, et al. Ionizing radiation effects in 4H-SiC nMOSFETs studied with electrically detected magnetic resonance[J]. IEEE Transactions on Nuclear Science, 2017, 64(1): 197-203. doi: https://doi. org/ 10.1109/TNS.2016.2622159.
[10] [10] SCHOEN K P,WOODALL J M,COOPER J A,et al. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers[J]. IEEE Transactions on Electron Devices, 1998,45(7):1595-1604. doi:https://doi.org/10.1109/16.701494.
[11] [11] MCGARRITY J M,OAKLEY R E,DELANCEY W M,et al. Displacement damage effects in SiC JFETs as a function of temperture[J]. American Institute of Physics, 1993,271(10):609-615. doi:https://doi.org/10.1063/1.43206.
[12] [12] HAZDRA P,ZáHLAVA V,VOBECK J. Point defects in 4H-SiC epilayers introduced by 4.5 MeV electron irradiation and their effect on power JBS SiC diode characteristics[J]. Solid State Phenomena, 2014, 20(206): 451-456. doi: https://doi. org/10.4028/ www.scientific.net/SSP.205-206.451.
[14] [14] CHAO D S. Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs[J]. Japanese Journal of Applied Physics, 2019,58(8):1-8. doi:https://doi.org/10.7567/1347-4065/aafc9b.
[15] [15] KUBOYAMA S, KAMEZAWA C, IKEDA N, et al. Anomalous charge collection in silicon carbide Schottky barrier diodes and resulting permanent damage and single-event burnout[J]. IEEE Transactions on Nuclear Science, 2006,53(6):3343-3348. doi: https://doi.org/10.1109/TNS.2006.885165.
[16] [16] WITULSKI A F,ARSLANBEKOV R,RAMAN A,et al. Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices[J]. IEEE Transactions on Nuclear Science, 2017,65(1):256-261.
[17] [17] SHOJI T, NISHIDA S, HAMADA K, et al. Analysis of neutron-induced single-event burnout in SiC power MOSFETs[J]. Microelectronics Reliability, 2015,55(9-10):1517-1521. doi:https://doi.org/10.1016/j.microrel.2015.06.081.
[18] [18] JAVANAINEN A,GALLOWAY K F,NICKLAW C,et al. Heavy ion induced degradation in SiC Schottky diodes:bias and energy deposition dependence[J]. IEEE Transactions on Nuclear Science, 2016,64(1):415-420. doi:https://doi.org/10.1109/TNS.2016.2616921.
[19] [19] JAVANAINEN A,TUROWSKI M,GALLOWAY K F,et al. Heavy-ion-induced degradation in SiC Schottky diodes:incident angle and energy deposition dependence[J]. IEEE Transactions on Nuclear Science, 2017, 64(8): 2031-2037. doi: https://doi. org/ 10.1109/TNS.2017.2717045.
[20] [20] ABBATE C,BUSATTO G,COVA P,et al. Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes[J]. IEEE Transactions on Nuclear Science, 2015,62(1):202-209. doi:https://doi.org/10.1109/TNS.2014.2387014.
[21] [21] ZHANG Hong,GUO Hongxia,ZHANG Fengqi,et al. Study on proton-induced single event effect of SiC diode and MOSFET[J]. Microelectronics Reliability, 2021(124):114329-114337. doi:https://doi.org/10.1016/j.microrel.2021.114329.
[22] [22] AKTURK A,WILKINS R,MCGARRITY J,et al. Single event effects in Si and SiC power MOSFETs due to terrestrial neutrons[J]. IEEE Transactions on Nuclear Science, 2016,64(1):529-535.
[25] [25] ZHANG Hong,GUO Hongxia,ZHANG Fengqi,et al. Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET[J]. Chinese Physics B, 2022,31(1):018501-018502. doi:https://doi.org/10.1088/1674-1056/ac051d.
[26] [26] MCPHERSON J A,KOWAL P J,PANDEY G K,et al. Heavy ion transport modeling for single-event burnout in SiC-based power devices[J]. IEEE Transactions on Nuclear Science, 2018,66(1):474-481. doi:https://doi.org/10.1109/TNS.2018.2880865.
[27] [27] NILSSON O,MEHLING H,HORN R,et al. Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide(300~2 300 K)[J]. High Temperatures-High Pressures, 1997,29(1):73. doi:10.1068/htec142.
[28] [28] TOULOUKIAN Y S,BUYCO E H. Specific heat nonmetallic solids in thermophysical properties of matter[M]. New York,USA: IFI/Plenum, 1970.
[29] [29] BALL D R, GALLOWAY K F, JOHNSON R A, et al. Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes[J]. IEEE Transactions on Nuclear Science, 2019,67(1):22-28.doi:https://doi.org/10.1109/TNS.2019.2955922.
[30] [30] SHERIDAN D C, CHUNG G, CLARK S, et al. The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2/interface[J]. IEEE Transactions on Nuclear Science, 2001,48(6):2229-2232. doi:10.1109/23.983200.
Get Citation
Copy Citation Text
ZHANG Hong, GUO Hongxia, GU Zhaoqiao, LIU Yitian, ZHANG Fengqi, PAN Xiaoyu, JUAnan, LIU Ye, FENG Yahui. Radiation effects of SiC JBS diodes and SiC MOSFETs[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 884
Category:
Received: Dec. 30, 2021
Accepted: --
Published Online: Oct. 28, 2022
The Author Email: Hong ZHANG (458171175@qq.com)