Acta Physica Sinica, Volume. 68, Issue 9, 097301-1(2019)

Graphene-based field effect transistor with ion-gel film gate

Hang Song, Jie Liu, Chao Chen, and Long Ba*
References(27)

[16] [16] Bard A J, Faulkner L R 3.0.CO;2-I'>2002 Electrochemical Methods. Fundamentals and Applications (2nd Ed.) (Weinheim: WILEY-VCH Verlag GmbH)

[25] [25] Geim A K, Novoselov K S 2010 The Rise of Graphene (Nanoscience and Technology: A Collection of Reviews from Nature Journals (Singapore: World Scientific) pp 11–19

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Hang Song, Jie Liu, Chao Chen, Long Ba. Graphene-based field effect transistor with ion-gel film gate[J]. Acta Physica Sinica, 2019, 68(9): 097301-1

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Paper Information

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Received: Jan. 11, 2019

Accepted: --

Published Online: Oct. 29, 2019

The Author Email:

DOI:10.7498/aps.68.20190058

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