Acta Optica Sinica, Volume. 17, Issue 12, 1614(1997)
High Power 808 nm InGaAsP/GaAs SCH Lasers
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[2] [2] D. Z. Garbuzov, I. N. Arsentyev, A. V. Ovchinnikov et al.. InGaAsP/InP(λ=1.3 μm)and InGaAsP/GaAs(λ=0.8 μm) quantum well lasers grown by liquid phase epitaxy. in Tech. Dig., Conf. Lasers Electro-Opt., Soc. Amer., Washingion DC. 1988: 396~398, Paper THU44
[4] [4] B. R. Zhu, R. H. Li, Y. J. Zhao et al.. 1.3 μm separate confinement lasers. Proc. SPIE, 1994, 2321: 323~325
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Power 808 nm InGaAsP/GaAs SCH Lasers[J]. Acta Optica Sinica, 1997, 17(12): 1614