Acta Optica Sinica, Volume. 17, Issue 12, 1614(1997)
High Power 808 nm InGaAsP/GaAs SCH Lasers
This paper presents new results obtained recently in studies of separate confinement structure (SCH) InGaAsP/GaAs lasers. Using Russia′s technology, the InGaAsP/GaAs lasers based on QW structure can be produced by short time liquid phase epitary (STLPE) employing a modified sliding boat technique. The interface abruptness in the InGaAsP/GaAs lasers can be made comparable to the lattice constant. Using 〈100〉 GaAs substrates, InGaAsP/GaAs SCH SQW lasers were fabricated and the followig values of the main parameters were obtained: lasing wavelength λ=808 nm, threshold current density J th =300 A/cm 3, CW power high to 1 ̄2 W for the laser with stripe width W=100 μm. 1000 h lifetime tests have been performed and the factors which affect the lifetime of the lasers are discussed.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Power 808 nm InGaAsP/GaAs SCH Lasers[J]. Acta Optica Sinica, 1997, 17(12): 1614