Journal of Inorganic Materials, Volume. 38, Issue 4, 406(2023)

Effect of Plasma Treatment on the Long-term Plasticity of Synaptic Transistor

Haiyang QIU... Guangtan MIAO, Hui LI, Qi LUAN, Guoxia LIU and Fukai SHAN* |Show fewer author(s)
Author Affiliations
  • College of Microtechnology & Nanotechnology, Qingdao University, Qingdao 266071, China
  • show less
    Figures & Tables(5)
    AFM images of (a) untreated and (b) plasma-treated In2O3 films
    Schematic illustration and properties of synaptic transistor
    STP (a) and LTP (b) characteristics of untreated and O2 plasma-treated (W/O2 plasma) device, (c) paired-pulse facilitation curves for device with and without O2 plasma treatment and (d) PPF index as a function of pulse interval Colorful figures are available on website
    Potentiation/depression characteristics of untreated (a) and O2 plasma-treated (c) devices, repeatability, and stability of P-D curves after 50 cycles of untreated (b) and O2 plasma-treated (d) devices
    Artificial neural network, synaptic weight cross array of hardware and supervised learning outcome tests
    Tools

    Get Citation

    Copy Citation Text

    Haiyang QIU, Guangtan MIAO, Hui LI, Qi LUAN, Guoxia LIU, Fukai SHAN. Effect of Plasma Treatment on the Long-term Plasticity of Synaptic Transistor[J]. Journal of Inorganic Materials, 2023, 38(4): 406

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 14, 2022

    Accepted: --

    Published Online: Oct. 17, 2023

    The Author Email: SHAN Fukai (fkshan@qdu.edu.cn)

    DOI:10.15541/jim20220675

    Topics