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Chinese Journal of Quantum Electronics, Volume. 34, Issue 6, 641(2017)

Research progress on GaN Ohmic properties improvement by laser irradiation

Hongtao HU1,*... Jingzhen SHAO2, and Xiaodong FANG12 |Show fewer author(s)
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    HU Hongtao, SHAO Jingzhen, FANG Xiaodong. Research progress on GaN Ohmic properties improvement by laser irradiation[J]. Chinese Journal of Quantum Electronics, 2017, 34(6): 641

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    Received: Dec. 15, 2016

    Accepted: --

    Published Online: Dec. 8, 2017

    The Author Email: Hongtao HU (hthu@mail.usct.edu.cn)

    DOI:10.3969/j.issn.1007-5461.2017.06.001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology