GaN materials have wide application prospects in the fields of high frequency, high power, high temperature and high-density integrated electronic devices etc, which is forefront and hot spots in global semiconductor field. In recent years, great progress has been made in the research of low contact resistivity of metal/GaN Ohmic contact. However, the metal/GaN Ohmic contact is still one of the most important factors that restrict the development and application of GaN devices. The introduction of laser technology provides a new method for the realization of Ohmic contact of metal /GaN. Investigation of Ohmic properties improvement of GaN materials by laser irradiation is summarized. Research progress of the excimer laser irradiation on the hole concentration change and improvement of GaN materials Ohmic contact properties is introduced. The low Ohmic contact resistivity scheme for GaN is discussed in order to explore the direction of better metal/GaN Ohmic contact.