Acta Photonica Sinica, Volume. 31, Issue 2, 205(2002)
THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS[J]. Acta Photonica Sinica, 2002, 31(2): 205