Acta Photonica Sinica, Volume. 31, Issue 2, 205(2002)

THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    References(3)

    [1] [1] Bartels W J,Nijman W J.X-ray double crystal diffractometry of Ga1-xAlxAs epitaxial layers.J Crystal Growth,1978,44(25):518~519

    [2] [2] Coltrin M E,Creighton J R,Hou H Q,et al.Organometallic vapor phase epitaxy (OMVPE).Materials Science and Engineering,1999,24(6):241~274

    [3] [3] Coltrin M E,Creighton J R,Hou H Q,et al.Organometallic vapor phase epitaxy(OMVPE).Materials Science and Engineering,1999,24(6):246~249

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS[J]. Acta Photonica Sinica, 2002, 31(2): 205

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    Paper Information

    Category: Optoelectronics

    Received: Jul. 5, 2001

    Accepted: --

    Published Online: Sep. 18, 2007

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