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Optoelectronics Letters, Volume. 12, Issue 4, 285(2016)

Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

Dong-ling LI1...2,*, Xiao-fei FENG3, Zhi-yu WEN1,2, Zheng-guo SHANG1,2, and Yin SHE12 |Show fewer author(s)
Author Affiliations
  • 1National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400030, China
  • 2Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China
  • 3No.24 Reaearch Institute of China Electronics Technology Group Corporation, Chongqing 400060, China
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    LI Dong-ling, FENG Xiao-fei, WEN Zhi-yu, SHANG Zheng-guo, SHE Yin. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition[J]. Optoelectronics Letters, 2016, 12(4): 285

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    Paper Information

    Received: Mar. 15, 2016

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Dong-ling LI (lidongling@cqu.edu.cn)

    DOI:10.1007/s11801-016-6058-6

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology