Bulk GaN is an ideal substrate for the fabrication of blue and green laser diodes (LDs), RF devices, and power electronic devices, which has broad prospects in the application of laser display, 5G mobile communication, and smart grid. The commercial bulk GaN substrates are mainly produced by hydride vapor phase epitaxy (HVPE) at present. Driven by the market demand, HVPE technology has developed rapidly in recent years. In this paper, recent progress in HVPE growth of bulk GaN substrate were reviewed, including the growth mechanisms of HVPE, doping in bulk GaN and the controlling of optical and electrical properties, the main defects in bulk GaN and their evolution, and the application of bulk GaN substrates in related devices. At last, the development trend of HVPE technology is previewed.