Chinese Optics Letters, Volume. 15, Issue 7, 071404(2017)

Suppression of far-field blooming in high-power broad-area diode lasers by optimizing gain distribution

Tao Wang1,2, Lijie Wang1, Shili Shu1, Sicong Tian1, Zhide Zhao3, Cunzhu Tong1、*, and Lijun Wang1
Author Affiliations
  • 1State Key laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Suzhou Everbright Photonics Co., Ltd, Suzhou 215000, China
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    Figures & Tables(5)
    Schematic diagram of the BA LRW laser under investigation.
    Output power curves as a function of current for BA LRW lasers. The inset shows the influence of r on the slope efficiencies.
    Lateral FF distributions of standard laser and LRW lasers with r=20% and r=100% at a 4 A injection current. The insert is the real spot size, respectively.
    Lateral divergence with 95% power content as a function of injection current.
    Lateral NF distributions of standard laser (r=0%) and LRW lasers with r=20% and 100% at injection currents of (a) I=1 A and (b) I=4 A.
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    Tao Wang, Lijie Wang, Shili Shu, Sicong Tian, Zhide Zhao, Cunzhu Tong, Lijun Wang. Suppression of far-field blooming in high-power broad-area diode lasers by optimizing gain distribution[J]. Chinese Optics Letters, 2017, 15(7): 071404

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Feb. 27, 2017

    Accepted: Apr. 7, 2017

    Published Online: Jul. 20, 2018

    The Author Email: Cunzhu Tong (tongcz@ciomp.ac.cn)

    DOI:10.3788/COL201715.071404

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