Chinese Journal of Quantum Electronics, Volume. 27, Issue 4, 480(2010)

Properties of strong-coupling magnetopolaron in a semiconductor quantum well

Rong-hua JIAN1,2、* and Cui-lan ZHAO1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(7)

    [1] [1] Wu X G, Peeters F M, et al. Two-dimensional polaron in a magnetic field [J]. Phys. Rev. B, 1985, 32: 7964-7969.

    [2] [2] Larsen D M. Perturbation theory for the two-dimensional polaron in a magnetic field [J]. Phys. Rev. B, 1986, 33: 799-806.

    [3] [3] Dugaev V K, Litvinov V I, Dobrowolski W. Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field [J]. Phys. Rev. B, 2000, 62: 1905-1911.

    [4] [4] Liu Z X, Shi J J, et al. Impurity bound polaron in a magnetic field in quantum well structures [J]. Superlattices and Microstructures, 1997, 22: 273-284.

    [6] [6] Li Shushen, et al. Spin-orbit splitting of a hydronenic donor impurity in GaAs/GaAlAs quantum wells [J]. Appl. Phys. Lett., 2008, 92(2): 022102.1-022102.3.

    [9] [9] Lu Tianquan, Zheng Yisong. Polaron properties in quantum wells [J]. Phys. Rev. B, 1996, 53: 1438-1445.

    [10] [10] Kartheuser E. Polarons in Ionic Crystals and Polar Semiconductors [M]. North-Holland, Amsterdam, 1972.

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    JIAN Rong-hua, ZHAO Cui-lan. Properties of strong-coupling magnetopolaron in a semiconductor quantum well[J]. Chinese Journal of Quantum Electronics, 2010, 27(4): 480

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    Paper Information

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    Received: Dec. 9, 2009

    Accepted: --

    Published Online: Aug. 10, 2010

    The Author Email:

    DOI:

    CSTR:32186.14.

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