Acta Photonica Sinica, Volume. 34, Issue 5, 742(2005)

Influence of Oxygen Partial Pressure on the Mechanical and Optical Properties of SiO2 Films Prepared by Electron Beam Evaporation

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(13)

    [1] [1] Blech I,Cohen U.Effects of humidity on stress in thin silicon dioxide films.J Appl Phys, 1982,53(6):4202~4207

    [3] [3] Sankur H,Gunning W.Sorbed water and intrinsic stress in composite TiO2-SiO2 films. J Appl Phys, 1989,66(2):807~812

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    [6] [6] Satoshi Takeda, Makoto Fukawa.Surface OH groups governing surface chemical properties of SiO thin films deposited by RF magnetron sputtering. Thin Solid Films, 2003,444:153

    [7] [7] Bartzsch H,Bocher B,Frach P,et al. Properties of SiO2 and Al3O2 films for electrical insulation applications 2 23deposited by reactive pulse magnetron sputtering. Surface and Coatings Technology,2003,174~175:774~778

    [8] [8] Gourbilleau F,Ternon C,Portier X,et al.Effect of swift heavy ions on the photoluminescence propertiesof Si/SiO2 multilayers. Physica,2003,E16:434~438

    [9] [9] Michler J,Mermoux M,von Kaenel Y,et al.Residual stress in diamond films:origins and modeling.Thin Solid Films, 1999,357:189~201

    [10] [10] Leplan H,Geenen B,Pauleau Y.Residual stress in evaporated silicon dioxide thin films:Correlation with deposition parameters and aging behavior.J Appl Phys, 1995,78(2):6926~6931

    [11] [11] Pivot J.Mechanical properties of SiOx thin films.Thin Solid Films, 1982,89:175~190

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Influence of Oxygen Partial Pressure on the Mechanical and Optical Properties of SiO2 Films Prepared by Electron Beam Evaporation[J]. Acta Photonica Sinica, 2005, 34(5): 742

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    Received: Mar. 23, 2004

    Accepted: --

    Published Online: Jun. 12, 2006

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