Semiconductor Optoelectronics, Volume. 42, Issue 6, 814(2021)

High Gain Graphene Photodetector Based on Top-Gated Interface Coupling Effect

FAN Anqi and SUN Jiuxun
Author Affiliations
  • [in Chinese]
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    References(10)

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    FAN Anqi, SUN Jiuxun. High Gain Graphene Photodetector Based on Top-Gated Interface Coupling Effect[J]. Semiconductor Optoelectronics, 2021, 42(6): 814

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    Paper Information

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    Received: Jul. 14, 2021

    Accepted: --

    Published Online: Feb. 14, 2022

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2021071402

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