Investigation of Mechanisms on 1/f Noise and G-R Noise in Optoelectronic Coupled Devices

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Acta Photonica Sinica, Volume. 34, Issue 6, 857(2005)

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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References(4)

[1] [1] Dai Y S, Xu J Sh. The noise analysis and noise reliability indicators of optoelectronic coupled devices.Solid-State Electronics, 2000,44(5):1495～1500

[4] [4] Shi J W, Jin E S, Ma J. An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers. Microelectronics Reliability, 1994,34(7): 1261～1264

[5] [5] Doru Ursutiu, Jones. Low-frequency noise used as a lifetime test of LEDs. Semicond Sci Technol, 1996,42(11):1133～1136

[9] [9] Gren C T,Brian K Jones.1/f noise in bipolar transistor.J Phys D: Appl Phys, 1985,18(1): 77～91

CLP Journals

[1] ZHANG Wen-wen, CHEN Qian. Noise Characteristics of Electron Multiplying Charge Coupled Devices[J]. Acta Photonica Sinica, 2009, 38(4): 756

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigation of Mechanisms on 1/f Noise and G-R Noise in Optoelectronic Coupled Devices[J]. Acta Photonica Sinica, 2005, 34(6): 857

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Paper Information

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Received: Oct. 29, 2004

Accepted: --

Published Online: Jun. 12, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology