Effect of Incident Light Scattering at AlGaAs Window Layer Interface on Resolution of Transmission-mode GaAs Photocathode

Xin GUO; Feng SHI; Tiantian JIA; Ruoyu ZHANG; Hongchang CHENG; Yijun ZHANG

doi:10.3788/gzxb20235208.0812001

Acta Photonica Sinica, Volume. 52, Issue 8, 0812001(2023)

Effect of Incident Light Scattering at AlGaAs Window Layer Interface on Resolution of Transmission-mode GaAs Photocathode

Xin GUO1...2, Feng SHI2,*, Tiantian JIA2, Ruoyu ZHANG2, Hongchang CHENG2 and Yijun ZHANG3 |Show fewer author(s)

Author Affiliations

¹School of Optoelectronics，Beijing Institute of Technology，Beijing 102401，China

²Science and Technology on Low-Light-Level Night Version Laboratory，Xi'an 710065，China

³School of Electronic and Optical Engineering，Nanjing University of Science and Technology，Nanjing 210094，China

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Figures & Tables(8)

Fig. 1. GaAs photocathode fabrication process and AlGaAs window layer interface scattering diagram

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Fig. 2. Surface roughness distribution of AlGaAs window layer

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Fig. 3. Gaussian distribution rough surface simulation result

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Fig. 4. STF function of AlGaAs surface window layer rough surface at different incident wavelengths

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Fig. 5. Point spread function of AlGaAs surface window layer rough surface at different incident wavelengths

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Fig. 6. Calculated values of PSNR_R at different wavelengths

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Fig. 7. Resolution test device

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Table 1. Resolution test results at different incident wavelengths
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Table 1. Resolution test results at different incident wavelengths
Incident wavelength/nm Limited resolution/（lp·mm^-1）
400~900 54
530 57
830 61

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Xin GUO, Feng SHI, Tiantian JIA, Ruoyu ZHANG, Hongchang CHENG, Yijun ZHANG. Effect of Incident Light Scattering at AlGaAs Window Layer Interface on Resolution of Transmission-mode GaAs Photocathode[J]. Acta Photonica Sinica, 2023, 52(8): 0812001

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