[1] [1] Zhao J H, Wang A, Altermatt P P, et al. High efficiency PERT cells on high quality N-Type CZ silicon substrates [C]//12th International Photovoltaic Science and Engineering Conf., 2001:19-22.

[2] [2] Zhao J H, Wang A, Altermatt P P, et al. High efficiency PERT cells on N-Type silicon substrates[C]// 29th IEEE Photovoltaic Specialist Conf., 2002:218-22.

[3] [3] Zhao J H, Schmidt J, Wang A, et al. Performance instability in N-Type PERT silicon solar cells[C]// 3th World Conference on Photovoltaic Energy Conversion, 2003: 923-926.

[4] [4] Macdonald D, Geerligs L, Azzizi A. Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping[J]. Journal of Applied Physics, 2004, 95(2):1021-1028.

[7] [7] Cousins P J, Smith D D, Luan H C, et al. Gen Ⅲ: improved performance at lower cost [C]//35th IEEE Potovoltaic Specialist Conf., 2010:823-826.

[8] [8] Kinoshita T, F ujishima D, Yano A, et al. The approaches for high efficiency HIT solar cell with very thin(＜100 mm) silicon wafer over 23% [C]// 26th European Photovoltaic Solar Energy Conf., 2011:871-874.

[10] [10] Book F, Weidenmann T, Gloger S, et al. Analysis of processing steps for industrial large area n-type solar cells with screen printed aluminum-alloyed rear emitter and selective FSF [R]. 26th European Photovoltaic Solar Energy Conference, 2011:1160.

[12] [12] Green M A, Emery K, Hishikawa Y, et al. Solar cell efficiency tables(version 39)[J]. Progress in Photovoltaics, 2009, 20(1):12-20.

[13] [13] Mishima T, Taguchi M, Sakata H, et al. Development status of high-efficiency HIT solar cells[J]. Solar Energy Materials and Solar Cells, 2011, 95(1):18-21.