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Journal of Synthetic Crystals, Volume. 53, Issue 9, 1536(2024)

Effects of Electron Irradiation on Defects of 4H-SiC MOS Materials

LIU Shuai1...2, XIONG Huifan1,2, YANG Xia2,3, YANG Deren1,2, PI Xiaodong1,2,*, and SONG Lihui12 |Show fewer author(s)
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    LIU Shuai, XIONG Huifan, YANG Xia, YANG Deren, PI Xiaodong, SONG Lihui. Effects of Electron Irradiation on Defects of 4H-SiC MOS Materials[J]. Journal of Synthetic Crystals, 2024, 53(9): 1536

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    Paper Information

    Received: Mar. 12, 2024

    Accepted: --

    Published Online: Oct. 21, 2024

    The Author Email: Xiaodong PI (xdpi@zju.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology