[1] [1] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545-0.

          Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545-0.

[2] [2] Hoang A M, Chen G, Haddadi A, et al. Demonstration of high performance bias-selectable dual-band short-/midwavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices[J]. Appl Phys Lett, 2013, 102: 011108.

          Hoang A M, Chen G, Haddadi A, et al. Demonstration of high performance bias-selectable dual-band short-/midwavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices[J]. Appl Phys Lett, 2013, 102: 011108.

[4] [4] Sun Yaoyao, Han Xi, Lv Yuexi, et al. Performance of dual-color mid-/long-wavelength infrared detectors based on type-II InAs/GaSb superlattice[J]. Aero Weaponry, 2018, 4(2): 56-59. (in Chinese)

          Sun Yaoyao, Han Xi, Lv Yuexi, et al. Performance of dual-color mid-/long-wavelength infrared detectors based on type-II InAs/GaSb superlattice[J]. Aero Weaponry, 2018, 4(2): 56-59. (in Chinese)

[5] [5] Aifer E H, Tischler J G, Warner J H, et al. Dual band LWIR/VLWIR type-II superlattice photodiodes[C]//Proc. of SPIE, 2005, 5783: 112-122.

          Aifer E H, Tischler J G, Warner J H, et al. Dual band LWIR/VLWIR type-II superlattice photodiodes[C]//Proc. of SPIE, 2005, 5783: 112-122.

[6] [6] Yaoyao Sun, Guowei Wang, Xi Han, et al. 320×256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice[J]. Superlattices and Microstructures, 2017, 111: 783-788.

          Yaoyao Sun, Guowei Wang, Xi Han, et al. 320×256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice[J]. Superlattices and Microstructures, 2017, 111: 783-788.

[7] [7] Shi Yanli. Type-II InAs/GaInSb Superlattices infrared detectors-one of the best choices as the third generation infrared detectors[J]. Infrared Technology, 2011, 33(11): 621-624. (in Chinese)

          Shi Yanli. Type-II InAs/GaInSb Superlattices infrared detectors-one of the best choices as the third generation infrared detectors[J]. Infrared Technology, 2011, 33(11): 621-624. (in Chinese)

[8] [8] Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices: a superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8): 2802-2807.

          Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices: a superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8): 2802-2807.

[9] [9] Huang Jianliang, Zhang Yanhua, Cao Yulian, et al. Antimonide type II superlattice infrared detectors[J]. Aero Weaponry, 2019, 26(2): 50-56. (in Chinese)

          Huang Jianliang, Zhang Yanhua, Cao Yulian, et al. Antimonide type II superlattice infrared detectors[J]. Aero Weaponry, 2019, 26(2): 50-56. (in Chinese)

[10] [10] Razeghi M, Hoang A M, Chen G, et al. High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb type-II superlattices [C]//Proc of SPIE, 2013, 8704: 87041W.

          Razeghi M, Hoang A M, Chen G, et al. High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb type-II superlattices [C]//Proc of SPIE, 2013, 8704: 87041W.

[11] [11] Sun Yaoyao, Han Xi, Hao Hongyue, et al. 320×256 Short-Mid-Wavelengh dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82: 140-143.

          Sun Yaoyao, Han Xi, Hao Hongyue, et al. 320×256 Short-Mid-Wavelengh dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82: 140-143.

[12] [12] Hong B H, Rybchenko S I, Itskevich I E, et al. Applicability of the kp method to modeling of InAs/GaSb short-period superlattices[J]. Physical Review B, 2009, 79: 165323.

          Hong B H, Rybchenko S I, Itskevich I E, et al. Applicability of the kp method to modeling of InAs/GaSb short-period superlattices[J]. Physical Review B, 2009, 79: 165323.

[14] [14] Hao Hongyue, Wei Xiang, Wang Guowei, et al. Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array[J]. Chinese Phys B, 2017, 26(4): 047303.

          Hao Hongyue, Wei Xiang, Wang Guowei, et al. Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array[J]. Chinese Phys B, 2017, 26(4): 047303.

[15] [15] Jiang Dongwei, Wei Xiang, Guo Fengyun, et al. Low crosstalk three-color infrared detector by controlling the minority carriers type of InAs/GaSb superlattices for middle-long and very-long wavelength[J]. Chinese Phys Lett, 2016, 33(4): 048502.

          Jiang Dongwei, Wei Xiang, Guo Fengyun, et al. Low crosstalk three-color infrared detector by controlling the minority carriers type of InAs/GaSb superlattices for middle-long and very-long wavelength[J]. Chinese Phys Lett, 2016, 33(4): 048502.