Flicker noise(1/f noise) in Optoelectronic Coupled Devices(OCDs) is studied over a wide range of bias currents with special emphasis on the influence of electrical stress.Experimental results demonstrate that there is a similar rule for OCDs before and after stressed,and the magnitude of 1/f noise is proportional to the bias current in the range of low currents and proportional to the power of the bias current in the rang of high currents.Comparing to virgin device,the magnitude of 1/f noise in the stressed device increases about 7 times.It is discussed that 1/f noise belongs to diffusion 1/f noise in the rang of low currents,while,at high currents,it belongs to recombination 1/f noise,and the increasing magnitude of 1/f noise is due to new traps induced by electrical stress.Based on the mechanisms of carrier numbers fluctuations and carrier relocity fluctuations,a 1/f noise model in OCDs is developed.Experimental results agree well with the developed model.