Acta Optica Sinica, Volume. 33, Issue 2, 231003(2013)

Microstructure and Luminous Property of Multilayer SiNx/Si/SiNx Thin Films

Lin Juan1,2、*, Yang Peizhi1,2, and Hua Qilin1,2
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(8)

    [1] [1] D. Di, I. Perez-Wurfl, G. Conibeer et al.. Formation and photoluminescence of Si quantum dots in SiO2/Si3N4 hybrid matrix for all-Si tandem solar cells[J]. Solar Energy Materials & Solar Cells, 2010, 94(12): 2238~2243

    [2] [2] Pei Ling Li, Chie GauBau, Tong Dai et al.. Study of silicon nitride film embedded with silicon quantum dots[C]. IEEE International Conference, 2011, 2: 20~23

    [3] [3] So Yong-Heng. Size dependent optical properties of Si quantum dots in Si-rich nitride/Si3N4 superlattice synthesized by magnetron sputtering[J]. J. Appl. Phys., 2011, 108(6): 064302

    [4] [4] E. G. Barbagiovanni, L. V. Goncharova, P. J. Simpson. Electronic structure study of ion-implanted Si quantum dots in a SiO2 matrix: analysis of quantum confinement theories[J]. Phys. Rev. B, 2011, 83(3): 035112

    [5] [5] Lucia V. Mercaldo, Paola Delli Veneri, Emilia Esposito et al.. Structural and optical properties of silicon quantum dots in silicon nitride grown in situ by PECVD using different gas precursors [J]. Mater. Sci. & Eng.: B, 2009, 159(15): 74~76

    [6] [6] M. Cardona, G. Guntherod. Light Scattering in Solid[M]. Berlin: Springer Verlag, 1980

    [7] [7] Tae Wook Kim, Chang-Hee Cho, Baek-Hyun. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH and NH[J]. Appl. Phys. Lett., 2006, 88(6): 123102~123107

    [8] [8] Nae Man Park, Chel-Jong Choi, Tae-Yeon Seong. Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride[J]. Phys. Rev. Lett., 2001, 86(7): 1355~1360

    CLP Journals

    [1] Tan Hua, Ni Zhenyi, Pi Xiaodong, Yang Deren. Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices[J]. Laser & Optoelectronics Progress, 2017, 54(3): 30006

    [2] Wu Tao, Jiang Xianfeng. Fabrication Process Study of Silicon Nitride Passivation Layer on GaAs Substrate at Low Temperature[J]. Laser & Optoelectronics Progress, 2015, 52(3): 31403

    [3] Xiao Heping, Sun Rujian, Ma Xiangzhu, Yang Kai, Zhang Shuangxiang. Characteristics of Compactness of SiO2 Thin Films Prepared by PECVD Method[J]. Laser & Optoelectronics Progress, 2016, 53(12): 123101

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    Lin Juan, Yang Peizhi, Hua Qilin. Microstructure and Luminous Property of Multilayer SiNx/Si/SiNx Thin Films[J]. Acta Optica Sinica, 2013, 33(2): 231003

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    Paper Information

    Category: Thin Films

    Received: Aug. 3, 2012

    Accepted: --

    Published Online: Dec. 31, 2012

    The Author Email: Juan Lin (linjuanlinjuan@126.com)

    DOI:10.3788/aos201333.0231003

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