Chinese Journal of Quantum Electronics, Volume. 20, Issue 6, 689(2003)

Application of Graded Heterojunction in HB-LED and Its Realizing Technique

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    References(15)

    [1] [1] Huang K H, Yu J G, Kuo C P, et al. Twofold efficiency improvement in high performance AlGaInP light-emitting diode in the 555~620 nm spectral region using a thick GaP window layer [J]. Appl. Phys. Lett., 1992, 61(9):1045-1047

    [3] [3] Causa F, Sarma J, Yunus S. Characterization of angled tapered superluminescent LEDs [J]. Applied Optics-LP,41(24): 5045-5050

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    [7] [7] Gray J W, Jalili Y S, Stavrinou P N, et al. High-efficiency, low voltage resonant cavity light emitting diodes operating around 650 nm [J]. Electron. Lett., 2000, 36(20): 1730-1731

    [8] [8] Wirth R, Karnutsch C, Kugler S, et al. High-efficient-cavity LEDs emitting at 650 nm [J]. IEEE Photonics Technology Lett., 2001, 13(5): 421-423

    [9] [9] Chang S J, Chang C S, Su Y K, et al. AlGaInP Yellow-Green light-emitting diode with a tensile strain barrier cladding layer [J]. IEEE Photonics Techn. Lett., 1997, 9(9): 1199-1201

    [10] [10] Seringfellow G B, et al. Higt Brightness Light Emitting Diode [M]. Academic Press, 1998. 166

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    [17] [17] Keci H C, et al. Heterostructure Laser (part one) [M]. 1985. 237-241

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    [in Chinese], [in Chinese], [in Chinese]. Application of Graded Heterojunction in HB-LED and Its Realizing Technique[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 689

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    Paper Information

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    Received: Jan. 13, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (liulugz@163.com)

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