Acta Photonica Sinica, Volume. 36, Issue 4, 595(2007)

Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction

[in Chinese]1,2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    References(5)

    [3] [3] SHEN S C.MCT versus quantum well structures for IR detectors[J].Semiconductor Science Technology,1993,8(1S):443-446.

    [5] [5] HE L,WU Y,CHEN L,et al.Composition control and surface defects of MBE-grown HgCdTe[J].Journal of Crystal Growth,2001:227-228,677-682.

    [7] [7] DEWAMES R E,WILLIAMS G M,PASKO J G,et al.Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation[J].Journal of Crystal Growth,1988,86(1-4):849-858.

    [9] [9] BAJAJ J,TENNANT W E,ZUCCA R,et al.Spatially resolved characterization of HgCdTe materials and devices by scanning laser microscopy[J].Semiconductor Science Technology,1993,8(6S):872-887.

    [10] [10] MUSCA C A,REDFERN D A,SMITH E P G,et al.Junction depth measurement in HgCdTe using laser beam induced current[J].Journal of Electronics Material,1999,28 (6):603-610.

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction[J]. Acta Photonica Sinica, 2007, 36(4): 595

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Dec. 2, 2005

    Accepted: --

    Published Online: Sep. 17, 2007

    The Author Email:

    DOI:

    Topics