Acta Photonica Sinica, Volume. 36, Issue 4, 595(2007)
Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction
Tools
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction[J]. Acta Photonica Sinica, 2007, 36(4): 595
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20