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Acta Optica Sinica, Volume. 42, Issue 15, 1504001(2022)

Topological Semimetal PtTe2 Terahertz Detector

Yuehua Zhong1, Yuzhu Han1, Zhihong Lai1, Yang Li2,3, Yun Shen2,3、*, and Xiaohua Deng3、**
Author Affiliations
  • 1School of Materials Science and Engineering, Nanchang University, Nanchang 330031, Jiangxi , China
  • 2Department of Physics, Nanchang University, Nanchang 330031, Jiangxi , China
  • 3Institute of Space Science and Technology, Nanchang University, Nanchang 330031, Jiangxi , China
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    AbstractGet PDF(in Chinese)
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    Schematic diagram of light path of terahertz photoelectric detection system

    Fig. 1. Schematic diagram of light path of terahertz photoelectric detection system

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    Structural and electronic properties of PtTe2. (a) Top view of PtTe2; (b) side view of PtTe2; (c) block and Brillouin region projected onto (001) surface (D is location of 3D Dirac point); (d) band diagram considering spin-orbit coupling (SOC) bulk PtTe2; (e) band dispersion in K¯⁃Γ¯⁃Μ¯ direction calculated using Wannier function

    Fig. 2. Structural and electronic properties of PtTe2. (a) Top view of PtTe2; (b) side view of PtTe2; (c) block and Brillouin region projected onto (001) surface (D is location of 3D Dirac point); (d) band diagram considering spin-orbit coupling (SOC) bulk PtTe2; (e) band dispersion in K¯⁃Γ¯⁃Μ¯ direction calculated using Wannier function

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    Characterization and electrical properties of PtTe2. (a) Schematic diagram of PtTe2 field effect transistor structure; (b) PtTe2 Raman spectrum; (c) Ids-Vds curves under fixed gate pressure; (d) Ids-Vg curves at fixed bias

    Fig. 3. Characterization and electrical properties of PtTe2. (a) Schematic diagram of PtTe2 field effect transistor structure; (b) PtTe2 Raman spectrum; (c) Ids-Vds curves under fixed gate pressure; (d) Ids-Vg curves at fixed bias

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    Device structure and terahertz response characteristics. (a) Photoconductive mechanism of PtTe2-based terahertz photoelectric detector; (b) antenna structure parameters; (c) microscopic images of devices; (d) photocurrent response of device at terahertz; (e) relation between photocurrent and incident optical power; (f) relation between responsivity and incident light power

    Fig. 4. Device structure and terahertz response characteristics. (a) Photoconductive mechanism of PtTe2-based terahertz photoelectric detector; (b) antenna structure parameters; (c) microscopic images of devices; (d) photocurrent response of device at terahertz; (e) relation between photocurrent and incident optical power; (f) relation between responsivity and incident light power

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    Yuehua Zhong, Yuzhu Han, Zhihong Lai, Yang Li, Yun Shen, Xiaohua Deng. Topological Semimetal PtTe2 Terahertz Detector[J]. Acta Optica Sinica, 2022, 42(15): 1504001

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    Paper Information

    Category: Detectors

    Received: Jan. 4, 2022

    Accepted: Mar. 3, 2022

    Published Online: Aug. 4, 2022

    The Author Email: Shen Yun (shenyun@ncu.edu.cn), Deng Xiaohua (Dengxiaohua0@gmail.com)

    DOI:10.3788/AOS202242.1504001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology