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Acta Optica Sinica, Volume. 41, Issue 5, 0516003(2021)

Theoretical Simulation on Degradation of GaAs Sub-Cells Induced by Proton Irradiation with Different Energies

Junwei Li1, Chengying Shi1, Zujun Wang2、*, and Yuanyuan Xue2
Author Affiliations
  • 1Xi′an Research Institute of High-Technology, Xi′an, Shaanxi 710025, China
  • 2Northwest Institute of Nuclear Technology, Xi′an, Shaanxi 710024, China
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    Figures&Tables (11)
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    References (19)
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    Figures & Tables(11)
    Structure model of GaAs sub-cell

    Fig. 1. Structure model of GaAs sub-cell

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    Degradation results of normalized maximum power of GaAs sub-cell irradiated by 5 MeV and 10 MeV protons versus proton fluence

    Fig. 2. Degradation results of normalized maximum power of GaAs sub-cell irradiated by 5 MeV and 10 MeV protons versus proton fluence

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    Degradation results of normalized short-circuit current density of GaAs sub-cell versus proton fluence for different irradiation energies

    Fig. 3. Degradation results of normalized short-circuit current density of GaAs sub-cell versus proton fluence for different irradiation energies

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    Schematic of photon absorption in active region of GaAs sub-cell

    Fig. 4. Schematic of photon absorption in active region of GaAs sub-cell

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    Degradation results of normalized open voltage of GaAs sub-cell versus proton fluence for different irradiation energies

    Fig. 5. Degradation results of normalized open voltage of GaAs sub-cell versus proton fluence for different irradiation energies

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    Degradation results of normalized fill factor of GaAs sub-cell versus proton fluence for different irradiation energies

    Fig. 6. Degradation results of normalized fill factor of GaAs sub-cell versus proton fluence for different irradiation energies

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    Degradation results of normalized maximum power of GaAs sub-cell versus proton fluence for different irradiation energies

    Fig. 7. Degradation results of normalized maximum power of GaAs sub-cell versus proton fluence for different irradiation energies

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    Degradation result of normalized maximum power of GaAs sub-cell versus displacement damage dose

    Fig. 8. Degradation result of normalized maximum power of GaAs sub-cell versus displacement damage dose

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    External quantum efficiencies of GaAs sub-cell for different proton irradiation energies when proton fluence is 1×1013 cm-2

    Fig. 9. External quantum efficiencies of GaAs sub-cell for different proton irradiation energies when proton fluence is 1×1013 cm-2

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    • Table 1. Related physical parameters of GaAs in simulation

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      Table 1. Related physical parameters of GaAs in simulation

      Material parameterValue
      Dielectric constant10.9
      Band gap /eV1.42
      Electron affinity /eV4.07
      Electron mobility /(cm2·V-1·s-1)8500
      Hole mobility /(cm2·V-1·s-1)400
      Intrinsic carrier concentration /cm-32×106

    • Table 2. Deep-level defects of proton irradiated GaAs sub-cell obtained by DLTS measurement[13]

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      Table 2. Deep-level defects of proton irradiated GaAs sub-cell obtained by DLTS measurement[13]

      Deep levelEnergy /eVDefect introduction rate /cm-1
      H1Ev+0.181.30
      H2Ev+0.231.31
      H3Ev+0.271.24
      H4Ev+0.771.01
      E1Ec-0.141.10
      E2Ec-0.251.14
      E3Ec-0.541.06
      E4Ec-0.720.98
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    Junwei Li, Chengying Shi, Zujun Wang, Yuanyuan Xue. Theoretical Simulation on Degradation of GaAs Sub-Cells Induced by Proton Irradiation with Different Energies[J]. Acta Optica Sinica, 2021, 41(5): 0516003

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    Paper Information

    Category: Materials

    Received: Oct. 10, 2020

    Accepted: Oct. 29, 2020

    Published Online: Apr. 7, 2021

    The Author Email: Wang Zujun (wangzujun@nint.ac.cn)

    DOI:10.3788/AOS202141.0516003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology