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Chinese Journal of Quantum Electronics, Volume. 17, Issue 3, 265(2000)

High Energy Gamma Irradiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Energy Gamma Irradiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors[J]. Chinese Journal of Quantum Electronics, 2000, 17(3): 265

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    Paper Information

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    Received: Dec. 28, 1998

    Accepted: --

    Published Online: May. 15, 2006

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology