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Chinese Journal of Quantum Electronics, Volume. 17, Issue 3, 265(2000)

High Energy Gamma Irradiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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    This paper reports theeffects of high energy gamma irradiation on the performance of QWIP. The dose ranged from1mrads to 16mrads. The dark current and spectral response of these radiated devices weremeasured at different dose levels. The detector performance becomes worse with increasingdose.

    Keywords
    gamma irradiationinfraredphotodetectormultiple quantum well
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Energy Gamma Irradiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors[J]. Chinese Journal of Quantum Electronics, 2000, 17(3): 265

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    Paper Information

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    Received: Dec. 28, 1998

    Accepted: --

    Published Online: May. 15, 2006

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology