Optics and Precision Engineering, Volume. 19, Issue 3, 593(2011)

Transient S-parameters of millimeter-wave MEMS switch

LIAO Xiao-ping* and XIAO Jian-bin
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    References(10)

    [1] [1] JANG Y H, LEE Y S, KIM Y K, et al.. High isolation RF MEMS contact switch in V-and W-bands using two directional motions[J]. Electronics Letters, 2010, 46(2):153-154.

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    [5] [5] QIAN J, CHANG H P, CETINER B A, et al.. RF MEMS asymmetric capacitive switch with high-isolation at selected low-microwave frequency[J]. Microwave and Optical Technology Letters, 2007,49(3):702-706.

    [6] [6] SIMION S.Modeling and design aspects of the MEMS switch[C]. 2003 International Semiconductor Conference,Vols 1 and 2,Proceedings. 2003:125-128.

    [7] [7] BUCCELLA C, FELIZIANI M, MANZI G. Circuit modeling of RF capacitive MEMS switch[C]. Proceedings of the IEEE International Symposium on Industrial Electronics 2005,2005:1117-1121.

    [8] [8] YUAN X L, HUANG Q A, LIAO X P. Analysis of electromagnetic interference of a capacitive RF MEMS switch during switching[J]. Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,2008,14(3):349-360.

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    LIAO Xiao-ping, XIAO Jian-bin. Transient S-parameters of millimeter-wave MEMS switch[J]. Optics and Precision Engineering, 2011, 19(3): 593

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    Paper Information

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    Received: Mar. 26, 2010

    Accepted: --

    Published Online: Mar. 30, 2011

    The Author Email: Xiao-ping LIAO (xpliao@seu.edu.cn)

    DOI:

    CSTR:32186.14.

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