Acta Optica Sinica, Volume. 29, Issue 11, 3072(2009)
A Study on the Low Energy X/γ-ray Spectral Response of CdZnTe Planar Detectors
Three CdZnTe planar detectors,named CZT1,CZT2 and CZT3 respectively,were fabricated based on the as-grown CdZnTe wafers grown with different dopant conditions.The low energy X/γ-ray spectral responses of the detectors were obtained under various electrical field strengths at room temperature.The energy resolution of the detectors was evaluated by combining the charge transport properties of the materials and the dopant behaviors.The deep level trapping centers of Cd2+i have been tentatively recognized as the electron trapping centers,hence deteriorating the resolution.Low In concentration doped CZT2 exhibits excellent X/γ-ray spectral resolution and charge transport properties,which implies a lower density of trapping centers in the crystal.In Al doped CZT3,however,a critically uncompleted charge carrier collection and in turn the reduced energy resolution is likely attributed to the scattering of the ionized aluminum interstitial Ali.
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Xu Yadong, Jie Wanqi, Zha Gangqiang, Gao Junning, Wang Tao, Fu li, Paul Sellin. A Study on the Low Energy X/γ-ray Spectral Response of CdZnTe Planar Detectors[J]. Acta Optica Sinica, 2009, 29(11): 3072
Category: Instrumentation, Measurement and Metrology
Received: Dec. 20, 2008
Accepted: --
Published Online: Nov. 16, 2009
The Author Email: Yadong Xu (dd220@mail.nwpu.edu.cn)