Acta Photonica Sinica, Volume. 50, Issue 10, 1004002(2021)
Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited)
Fig. 1. A germanium tin alloy with 22.3% tin composition by CVD epitaxy[5]
Fig. 2. Spectral response and imaging result of Ge0.80Sn0.20 photoconductor[22]
Fig. 3. Schematic diagram and relationship between responsivity and wavelength under different bias voltages of the Ge0.89Sn0.11 photodiode[23]
Fig. 4. Spectral response of Ge0.998Pb0.002 photodetector for different temperatures[14]
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Jun ZHENG, Xiangquan LIU, Mingming LI, Zhi LIU, Yuhua ZUO, Chunlai XUE, Buwen CHENG. Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited)[J]. Acta Photonica Sinica, 2021, 50(10): 1004002
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Received: Jul. 21, 2021
Accepted: Aug. 20, 2021
Published Online: Nov. 3, 2021
The Author Email: ZHENG Jun (zhengjun@semi.ac.cn)