Acta Photonica Sinica, Volume. 50, Issue 10, 1004002(2021)

Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited)

Jun ZHENG1...2,*, Xiangquan LIU1,2, Mingming LI1,2, Zhi LIU1,2, Yuhua ZUO1,2, Chunlai XUE1,2, and Buwen CHENG12 |Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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    Figures & Tables(9)
    A germanium tin alloy with 22.3% tin composition by CVD epitaxy[5]
    Spectral response and imaging result of Ge0.80Sn0.20 photoconductor[22]
    Schematic diagram and relationship between responsivity and wavelength under different bias voltages of the Ge0.89Sn0.11 photodiode[23]
    Spectral response of Ge0.998Pb0.002 photodetector for different temperatures[14]
    Optically pumped F-P cavity germanium tin laser[28,30-31]
    Optically pumped microdisk germanium tin laser[35]
    Electrically pumped F-P cavity germanium tin laser[36]
    • Table 1. Structure and performance of GeSn photodetector

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      Table 1. Structure and performance of GeSn photodetector

      ReferencesSn composition /%StructureResponsivity /(A·W-1Cutoff wavelength /μm3⁃dB bandwidth /GHzYears
      2110PC1.63 @ 77 K,1.55 μm2.4/2014
      2211.5~20.0PC0.0067 @ 2 μm3.65/2019
      2311PIN0.32 @ 2 μm2.65/2018
      248MQW PIN0.11 @ 2 μm2.26/2020
      258MQW PIN0.015 @ 2 μm/>10 @ 2 μm2019
      264.9PIN0.014 @ 2 μm>2>30 @ 2 μm2021
      274.3WG PIN0.292 @ 1.8 μm1.95/2021
    • Table 2. Types and performance of GeSn lasers

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      Table 2. Types and performance of GeSn lasers

      ReferencesSn composition /%TypesLasing temperature /K

      Threshold/

      (kW·cm-2

      Years
      2812.6F⁃P<90325 @ 22 K2015
      2910.9F⁃P<11068 @ 10 K2016
      3011.9~17.5F⁃P<180920 @ 180 K2017
      3111~20F⁃P<27047 @ 77 K2019
      328~16F⁃P<2739 @ 25 K2019
      3312.5MD<130220 @ 50 K2016
      3413.3MD<12040 @ 20 K2018
      355.4MD

      <70 @ CL

      <100 @ PL

      1.1 @ 25 K,CL

      0.8 @ 25 K,PL

      2020
      3611F⁃P<100598 A/cm2 @ 10 K2020
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    Jun ZHENG, Xiangquan LIU, Mingming LI, Zhi LIU, Yuhua ZUO, Chunlai XUE, Buwen CHENG. Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited)[J]. Acta Photonica Sinica, 2021, 50(10): 1004002

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    Paper Information

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    Received: Jul. 21, 2021

    Accepted: Aug. 20, 2021

    Published Online: Nov. 3, 2021

    The Author Email: ZHENG Jun (zhengjun@semi.ac.cn)

    DOI:10.3788/gzxb20215010.1004002

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