Journal of Semiconductors, Volume. 43, Issue 4, 041105(2022)
Structural evolution of low-dimensional metal oxide semiconductors under external stress
Fig. 1. (Color online) Anelasticity in CuO induced by the point defects migration[
Fig. 2. (Color online) Oxygen vacancy diffusion pathways in CuO[
Fig. 3. (Color online) The phase transition of ZnO NW with
Fig. 4. (Color online) The phase stability of WZ, h-MgO, and BCT structures in ZnO[
Fig. 5. (Color online) The effects of e-beam irradiation on the anelasticity in CuO NWs[
Fig. 6. The phase transition of ZnO NW by applying 200 kV e-beam[
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Peili Zhao, Lei Li, Guoxujia Chen, Xiaoxi Guan, Ying Zhang, Weiwei Meng, Ligong Zhao, Kaixuan Li, Renhui Jiang, Shuangfeng Jia, He Zheng, Jianbo Wang. Structural evolution of low-dimensional metal oxide semiconductors under external stress[J]. Journal of Semiconductors, 2022, 43(4): 041105
Category: Reviews
Received: Nov. 12, 2021
Accepted: --
Published Online: Apr. 25, 2022
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