Fig. 1. Energy level diagrams of (a) hole-only device and (b) electron-only device.

Fig. 2. (a) Normalized PL spectra of electron-only device; (b) normalized PL spectra of hole-only device.

Fig. 3. (a) Normalized PL intensity versus current density; (b) J–V characteristics.

Fig. 4. (a) Transient PL decay curves of electron-only device; (b) transient PL decay curves of hole-only device.

Fig. 5. Quenching rate constant K_q versus cunrrent density.

Fig. 6. Current efficiency vs current density in devices with mCBP:DPABI, 5%—15% guest concentration.

Fig. 7. (a) J-V characteristics; (b) L-V characteristics; (c)η-J characteristics; (d) EQE-L characteristics.