Chinese Journal of Quantum Electronics, Volume. 18, Issue 5, 462(2001)

Electron Reflection at Interface in Superlattice and Induced Photocu rrentCharacteristics

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    References(5)

    [1] [1] Toshihiko Makino. Analyticalformulas for the optical gain of quantum well [J]. IEEE Journal of Quantum Elec tronics,1996, 32(3): 493

    [2] [2] Sadal Adach. GaAs, AlAs and AlxGa1-xAs: Material parameters for use in research anddevices applications. [J]J. Appl. Phys., 1985, 58(3): R1~29

    [3] [3] Levine B F et al. Tunable long-wavelength detectors using graded barrier quantumwells grown by electron beam source molecular beam epitary [J]. Appl. Phys. Lett., 1990,57(4): 383

    [4] [4] Manasreh M D et al. Intersubband Infraredabsorption in GaAs/A10.3Ga0.7As quantumwell structure [J]. Appl,Phys. Lett., 1990, 57(17): 1790

    [5] [5] Choe J W et al. Exchange interaction effects in quantum well infrared detectors[J]. Appl. Phys, Lett., 1990,56(17): 1679

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Electron Reflection at Interface in Superlattice and Induced Photocu rrentCharacteristics[J]. Chinese Journal of Quantum Electronics, 2001, 18(5): 462

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    Paper Information

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    Received: Mar. 19, 2001

    Accepted: --

    Published Online: May. 15, 2006

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