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Acta Physica Sinica, Volume. 69, Issue 2, 028102-1(2020)

Controllable growth of GeSi nanowires on trench patterned Si(001) substrate

Fei Gao1,2, Qi Feng1, Ting Wang1, and Jian-Jun Zhang1、*
Author Affiliations
  • 1Key Laboratory of Nanophysics and Device, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    Fei Gao, Qi Feng, Ting Wang, Jian-Jun Zhang. Controllable growth of GeSi nanowires on trench patterned Si(001) substrate[J]. Acta Physica Sinica, 2020, 69(2): 028102-1

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    Received: Sep. 16, 2019

    Accepted: --

    Published Online: Nov. 9, 2020

    The Author Email:

    DOI:10.7498/aps.69.20191407

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology