[1] [1] GYU-SEOB J, WOORHAM B, DEOG-KYOON J. Review of CMOS integrated circuit technologies for high-speed photo-detection[J]. Sensors 2017, 17 (9): 1962-1-1962-40.

[8] [8] HUANG J, GAO L, ZHOU Y, et al. Design of APD detector circuit for thomson scattering system on J-TEXT tokamak [J]. IEEE Transactions on Plasma Science, 2018, 46(11): 3995-3997.

[10] [10] WANG J X, XIA K Q, LIU J L, et al. Self-powered silicon PIN photoelectric detection system based on triboelectric nanogenerator[J]. Nano Energy, 2020, 69(10): 44611-1-44611-9.

[11] [11] CHEN Y H, JHENG J W, MISHRA P, et al. GaSb MSM photodetectors on Si waveguides by rapid melt growth method[J]. IEEE Photonics Technology Letters, 2018, 30(11): 1013-1015.

[12] [12] HOU X, ZOU Y, DING M, et al. Review of polymorphous Ga2O3 materials andtheir solar-blind photodetector applications[J]. Journal of Physics D-applied Physics, 2021, 54(4): 3001-1-3001-34.

[14] [14] AULL B. Geiger-mode avalanche photodiode arrays integrated to all-digital CMOS circuits[J]. Sensors, 2016, 16(4): 495-1-495-14.

[16] [16] DJEKIC D, FANTNER G, BEHRENDS J, et al. A transimpedance amplifier using a widely tunable PVT-independent pseudo-resistor for high-performance current sensing applications[C]//IEEE. Proceedings of Esscirc-IEEE European Solid State Circuits Conference. Leuven: IEEE, 2017: 79-82.

[17] [17] PROESEL J, RYLYAKOV A, SCHOW C. Optical receivers using DFE-IIR equalization[C]//IEEE. Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers. San Francisco: IEEE, 2013: 130-131.

[18] [18] SEYED A H, MAJID P, MOHAMMAD R S. Utilization of a cascoded-inverter in an RGC structure as a low-power[J]. broadband TIA, Microelectronics Journal, 2020, 99(1): 104749-1-104749-6.

[19] [19] ELMIRA S P, ZIADDIN D K, SIROOS T. A 10-GHz inductorless mo-dified regulated cascode transimpedance amplifier for optical fiber communication[J]. Microelectronics Journal, 2021, 114(1): 105123-1-105123-7.

[20] [20] PARK S M, LEE J, YOO H J. 1-Gb/s 80-dBΩ fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects[J]. IEEE Journal of Solid-State Circuits, 2004, 39(6): 971-974.

[21] [21] GHIMOUZ A, RARBI F, GALLIN M L, et al. A preamplifier discri-minator circuit based on a common gate feedforward TIA for fast time mea-surements using diamond detectors[C]//IEEE. Proceedings of 25th IEEE International Conference on Electronics, Circuits and Systems(ICECS). Bordeaux: IEEE, 2018: 281-284.

[22] [22] KAITO F, YASUHIRO T, DAISUKE I, et al. 49.4dB Ω 46.8GHz multiple shunt-shunt feedback regulated cascode TIA in 0.25-μm InP-HBT process[C]//IEEE. Proceedings of 2020 IEEE Asia-Pacific Microwave Conference(APMC). Hong Kong: IEEE, 2020: 477-479.

[23] [23] KUMAR V, SARAVANAN G S, DURAISWAMY P, et al. Selvaraja, single stage low noise inductor-less TIA for RF over fiber communication[J]. IEEE Access, 2021, 9(1): 141504-141512.

[24] [24] LI D, LIU M, GENG L. A 10-Gb/s optical receiver with sub-microampere input-referred noise[J]. IEEE Photonics Technology Letters, 2017, 29(24): 2268-2271.

[25] [25] ROMANOVA A, VAIDOTAS B. A review of modern CMOS transimpedance amplifiers for OTDR applications[J]. Electronics, 2019, 8(10): 1073-1-1073-33.

[26] [26] ATEF M, CHEN H, ZIMMERMANN H. 10 Gb/s inverter based cascode transimpedance amplifier in 40nm CMOS technology[C]//IEEE. Proceedings of 16th international symposium on design and diagnostics of electronic circuits & systems(DDECS). Karlovy Vary: IEEE, 2013: 72-75.

[27] [27] KALANI S, HAQUE T, GUPTA R, et al. Benefits of using VCO-OTAs to construct TIAs in wideband current-mode receivers over inverter-based OTAs[J]. IEEE Transactions on Circuits and Systems I: Regular Pap-ers, 2019, 66(5): 1681-1691.

[28] [28] BAE W. CMOS inverter as analog circuit: an overview[J]. Journal of Low Power Electronics and Applications, 2019, 9(3): 26-41.

[29] [29] PAN Q, LUO X. A 58-dBΩ20-Gb/s inverter-based cascode transim-pedance amplifier for optical communications[J]. Journal of Semiconductors, 2022, 43(1): 6-13.