Acta Physica Sinica, Volume. 68, Issue 2, 026801-1(2019)
Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale
Figures & Tables(8)
Fig. 1. Schematic diagram of simulation of Si/Ge interface.Si/Ge界面模拟示意图
Fig. 2. Diagram of stress calculation of Si and Ge system.Si和Ge体系应力计算示意图
Fig. 3. Variation of stress at Si/Ge interface under different sizes of Ge.不同Ge尺寸下Si/Ge界面应力的变化
Fig. 4. Relationship between distance
Fig. 5. Effect of different point defect density on stress at Si/Ge interface in buffer layer.缓冲层缺陷密度对Si/Ge界面应力的影响
Fig. 6. Effect of different point defect density on the stress.不同密度的空位缺陷对应力的影响规律
Fig. 7. Relationship of the Si/Ge interface stress difference and the single defect interface stress difference with the defect density.Si/Ge界面应力差及单缺陷产生的应力差与缺陷密度的关系
Table 1.
Parameters of Tersoff potential function[33].
Tersoff势函数参数[33]
View tableView in ArticleTable 1.
Parameters of Tersoff potential function[33].
Tersoff势函数参数[33]
参数 Si Ge 注: \begin{document}${\chi _{{\rm Si} -{\rm Ge}}} = 1.00061$\end{document} A /eV1.8308×103 1.769×103 B /eV4.7118×102 4.1923×102 λ /Å−12.4799 2.4451 μ /Å−11.7322 1.7047 β 1.1000×10−6 9.0166×10−7 n 7.8734×10−1 7.5627×10−1 c 1.0039×105 1.0643×105 d 1.6217×101 1.5652×101 h −5.9825×10−1 −4.3884×10−1 R /Å2.7 2.8 S /Å3.0 3.1
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Xian Chen, Jing Zhang, Zhao-Huan Tang. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale[J]. Acta Physica Sinica, 2019, 68(2): 026801-1
Paper Information
Category: Research Articles
Received: Aug. 14, 2018
Accepted: --
Published Online: Sep. 29, 2019
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