Acta Physica Sinica, Volume. 68, Issue 2, 026801-1(2019)
Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale
Fig. 1. Schematic diagram of simulation of Si/Ge interface.Si/Ge界面模拟示意图
Fig. 2. Diagram of stress calculation of Si and Ge system.Si和Ge体系应力计算示意图
Fig. 3. Variation of stress at Si/Ge interface under different sizes of Ge.不同Ge尺寸下Si/Ge界面应力的变化
Fig. 4. Relationship between distance
Fig. 5. Effect of different point defect density on stress at Si/Ge interface in buffer layer.缓冲层缺陷密度对Si/Ge界面应力的影响
Fig. 6. Effect of different point defect density on the stress.不同密度的空位缺陷对应力的影响规律
Fig. 7. Relationship of the Si/Ge interface stress difference and the single defect interface stress difference with the defect density.Si/Ge界面应力差及单缺陷产生的应力差与缺陷密度的关系
Get Citation
Copy Citation Text
Xian Chen, Jing Zhang, Zhao-Huan Tang. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale[J]. Acta Physica Sinica, 2019, 68(2): 026801-1
Category: Research Articles
Received: Aug. 14, 2018
Accepted: --
Published Online: Sep. 29, 2019
The Author Email: