Opto-Electronic Engineering, Volume. 31, Issue z1, 114(2004)

Full solid-state cooling system for high power semiconductor laser

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    References(6)

    [2] [2] BOTEZ D, SCIFRES D. Diode laser arrays [M]. Cambridge University Press, Cambridge, 1994.

    [3] [3] HANKE C, KORTE L, ACKLIN B, et al. Highly reliable 40W-cw-InGaAlAs/GaAs-808nm laser bars[J]. SPIE, 1999, 3462: 47-48.

    [4] [4] GARBUZOV D, ANTONISHKIS N, BONDAREV A, et al. High-power 0.8μm InGaAsP-AsGa SCH SQW laser[J]. IEEE J.Quantum. Electron, 1991, 27(6): 1531-1536.

    [5] [5] BACHMANN F. Present technology, industrial applications and future prospects of high power diode lasers[J]. SPIE, 2002,4762: 1-15.

    [9] [9] ZOU Y, OSINSKI J S, GRODZINSKI P, et al. Effect of Auger recombination and differential gain on the temperature sensitivity of quantum well laser[J]. Appl. Phys. Lett, 1993, 62(2): 175-177.

    [10] [10] DAUSCHER A, LENOIR B, BOFFOUE O, et al. Thermoelectric films prepared by pulsed laser deposition[J]. SPIE, 2002,4762: 52-63.

    CLP Journals

    [1] Liu Gang, Zhu Chen, Lin Jixiang. Numerical Simulation Based on Computational Fluid Dynamics Method for a Semiconductor Laser External Heat Dissipation Design[J]. Chinese Journal of Lasers, 2010, 37(S1): 81

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Full solid-state cooling system for high power semiconductor laser[J]. Opto-Electronic Engineering, 2004, 31(z1): 114

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    Paper Information

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    Received: Aug. 9, 2004

    Accepted: --

    Published Online: Nov. 14, 2007

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