A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

Xiaojie Wang; Zhanwei Shen; Guoliang Zhang; Yuyang Miao; Tiange Li; Xiaogang Zhu; Jiafa Cai; Rongdun Hong; Xiaping Chen; Dingqu Lin; Shaoxiong Wu; Yuning Zhang; Deyi Fu; Zhengyun Wu; Feng Zhang

doi:10.1088/1674-4926/43/12/122802

Journal of Semiconductors, Volume. 43, Issue 12, 122802(2022)

A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

Xiaojie Wang¹, Zhanwei Shen^2、*, Guoliang Zhang¹, Yuyang Miao¹, Tiange Li¹, Xiaogang Zhu¹, Jiafa Cai¹, Rongdun Hong^1,3, Xiaping Chen¹, Dingqu Lin¹, Shaoxiong Wu¹, Yuning Zhang¹, Deyi Fu¹, Zhengyun Wu¹, and Feng Zhang^1,4、**

Author Affiliations

¹College of Physical Science and Technology, Xiamen University, Xiamen 361005, China

²Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

³Shenzhen Research Institute of Xiamen University, Shenzhen 518057, China

⁴Jiujiang Research Institute of Xiamen University, Jiujiang 332000, China

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Xiaojie Wang, Zhanwei Shen, Guoliang Zhang, Yuyang Miao, Tiange Li, Xiaogang Zhu, Jiafa Cai, Rongdun Hong, Xiaping Chen, Dingqu Lin, Shaoxiong Wu, Yuning Zhang, Deyi Fu, Zhengyun Wu, Feng Zhang. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics[J]. Journal of Semiconductors, 2022, 43(12): 122802

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Paper Information

Category: Articles

Received: May. 2, 2022

Accepted: --

Published Online: Dec. 27, 2022

The Author Email: Shen Zhanwei (zwshen@semi.ac.cn), Zhang Feng (fzhang@xmu.edu.cn)

DOI:10.1088/1674-4926/43/12/122802

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