[1] [1] B. Bode, R. Miiller, G. Bohm et al.. Monotithic interation of GaAs-AlGaAs quantum well lasers with directional couplers using vertical coupling of light. IEEE Photonics Technol. Lett., 1996, 8(12): 1591～1593

[2] [2] Robert J. Deri. Monolithic integration of optical waveguide civuitry with Ⅲ-Ⅴ photodetectors for advanced lightwave receivers. IEEE J. Lightwave Technol., 1987, 11(8): 1296～1313

[3] [3] D. B. Hall, C. Yeh. Leaky waves in a heteroepitaxial film. J. Appl. Phys., 1973, 44(5): 2271～2274

[4] [4] A. Splett, T. Zinke, K. Petermann et al.. Integration of waveguides and photodetectors in SiGe for 1.3 μm operation. IEEE Pholeonics Technol. Lett., 1994, 6(1): 59～61

[5] [5] V. P. Kefan, P. G. May, F. K. Legoues et al.. Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics. J. Crystal Growth, 1991, 111: 936

[6] [6] S. Luryi, T. P. Pearsall, H. Temkin. Waveguide infrared photodectors on a silicon chip. IEEE Electron Device Lett., 1986, EDL-7(2): 104～107